Loading data. Please wait

Search standard  
Advanced search

ISO 14706:2014

Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

Pages: 32
Publication date: 2014-08-01
Price: 138 vnd

Add to cart
ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.
Document identifier
ISO 14706:2014
Title
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
ISO Category
TC 201: Surface chemical analysis
Publication date
2014-08-01
Status
Effective
International Relationship
BS ISO 14706:2014
Cross references
Latest version
ISO 14706:2014
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Document identifier ISO 14706:2014
Publication date 2014-08-01
Classification 71.040.40. Chemical analysis
Status Effective
*
History of version
ISO 14706:2014 * ISO 14706:2000
Keywords
Classification
71.040.40. Chemical analysis
Pages
32
Price 138 vnd

POPULAR PUBLISHERS | ALL PUBLISHERS