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ISO 14706:2000

Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

Pages: 23
Publication date: 2000-12-15
Price: Contact

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This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.The method is applicable to:elements of atomic number from 16 (S) to 92 (U);contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2;contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
Document identifier
ISO 14706:2000
Title
Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
ISO Category
TC 201/WG 2: Total reflection X-ray fluorescence spectroscopy
Publication date
2000-12-15
Status
Ineffective
International Relationship
BS ISO 14706:2000 * BS ISO 14706:2000
Cross references
Latest version
ISO 14706:2014
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Document identifier ISO 14706:2014
Publication date 2014-08-01
Classification 71.040.40. Chemical analysis
Status Effective
*
History of version
ISO 14706:2014*ISO 14706:2000 * ISO 14706:2014 * ISO 14706:2000
Keywords
Classification
71.040.40. Chemical analysis
Pages
23
Price Contact

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