These guidelines apply to GaAs Monolithic Microwave Integrated Circuits (MMICs) and their individual component building blocks, such as GaAs Metal-Semiconductor Field Effect Transistors (MESFETs), Pseudomorphic High Electron Mobility Transistors (PHEMTs), Heterojunction Bipolar Transistors (HBTs), resistors, and capacitors. While the procedure described in this document may be applied to other semiconductor technologies, especially those used in RF and microwave frequency analog applications, it is primarily intended for technologies based on GaAs and related III-V material systems (InP, AlGaAs, InGaAs, InGaP, GaN, etc).
Document identifier
JEDEC JEP118
Title
GUIDELINES FOR GaAs MMIC AND FET LIFE TESTING
JEDEC Category
JC-14.7: Gallium Arsenide Reliability and Quality Standards
Publication date
2018-12-01
International Relationship
History of version
JEDEC JEP118 * JEDEC JEP118
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