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SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7396, 2N7397 AND, 2N7398, JANSD AND JANSR
Pages: 21
Publication date: 2019-10-26
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
Pages: 33
Publication date: 2019-09-03
Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N5822, 1N6864, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
Pages: 23
Publication date: 2019-08-22
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N2604 AND 2N2605, JAN, JANTX, JANTXV, AND JANS
Pages: 29
Publication date: 2019-04-19
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Publication date: 2019-04-16
SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6950 THROUGH 1N6986, JAN, JANTX, JANTXV, AND JANS
Pages: 16
Publication date: 2019-03-22
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)
Pages: 24
Publication date: 2019-03-08
Semiconductor Device, Transistor, NPN, Silicon, Power, Types 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, and 2N6693
Pages: 35
Publication date: 2019-01-30
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR
Pages: 30
Publication date: 2018-11-23
Transistor, NPN, Silicon, Switching, Medium-Power, through-Hole Mount, Types 2N1479, 2N1480, 2N1481 and 2N1482, Quality Level Jan
Pages: 12
Publication date: 2018-11-19
