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Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4370A 1 through 1N4372A-1 and 1N746A-1 through 1N759A-1, 1N4370AUR-1 through 1N4372AUR-1 and 1N746AUR-1 through 1N759AUR-1
Pages: 33
Publication date: 2019-12-13
Semiconductor Device, Transistor, NPN, Silicon, Low-Power Types: 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3440, 2N3440L, 2N3440UA, AND 2N3440U4
Pages: 34
Publication date: 2019-11-19
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7648 QUALITY LEVELS JANTXV AND JANS
Pages: 25
Publication date: 2019-11-07
Wrapping Materials, Volatile Corrosion Inhibitor Treated, Opaque
Pages: 1
Switches, Push, Momentary, 2 Circuit, Unsealed and Sealed
Pages: 6
Publication date: 2019-10-21
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N3766, 2N3767 JAN, JANTX, AND JANTXV
Pages: 14
Publication date: 2019-05-24
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
Pages: 11
Publication date: 2019-03-12
Transistor, Field Effect, Radiation Hardened, N-Channel, Silicon, Surface Mount, Types 2N7587, 2N7589, 2N7591, and 2N7593, Quality Levels JANTXV and JANS
Pages: 26
Publication date: 2019-03-08
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDEN
Pages: 21
Publication date: 2019-01-19
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE, TEMPERATURE COMPENSATED, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM
Pages: 15
Publication date: 2019-01-18
