This publication is intended for power GaAs FET applications requiring high reliability. An accurate measurement of thermal resistance is extremely important to provide the user with knowledge of the FETs operating temperature so that more accurate life estimates can be made. FET failure mechanisms and failure rates have, in general, an exponential dependence on temperature (which is why temperature-accelerated testing is successful). Because of the exponential relationship of failure rate with temperature, the thermal resistance should be referenced to the hottest part of the FET.
Document identifier
JEDEC JEP110
Title
GUIDELINES FOR THE MEASUREMENT OF THERMAL RESISTANCE OF GaAs FETS
JEDEC Category
JC-14.7: Gallium Arsenide Reliability and Quality Standards
Publication date
1988-07-01
International Relationship
| Price |
54 vnd |
.jpg){kind=logo}
---Logo.jpg){kind=logo}
.jpg){kind=logo}
-_-logo.png){kind=logo}
.jpg){kind=logo}
.png)
