Establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also know as MESFETs) designed for use in high-reliability space application such as spacecraft communications transmitters. Identifies the electrical parameters, wafer acceptance tests, screening tests, qualification tests, and lot acceptance tests pertinent to power GaAs FETs. Applicable to packaged and chip-carrier parts; portions may not be applicable to unpackaged and unmounted chips.
Document identifier
JEDEC JES 2
Title
TRANSISTOR, GALLIUM ARSENIDE POWER FET, GENERIC SPECIFICATION
JEDEC Category
JC-14.7: Gallium Arsenide Reliability and Quality Standards
Publication date
1992-07-01
International Relationship
| Price |
91 vnd |
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