ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
Document identifier
ISO 12406:2010
Title
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
ISO Category
TC 201/SC 6: Secondary ion mass spectrometry
Publication date
2010-11-15
International Relationship
BS ISO 12406:2010 * BS ISO 12406:2010
| Price |
103 vnd |
.jpg){kind=logo}
---Logo.jpg){kind=logo}
.jpg){kind=logo}
-_-logo.png){kind=logo}
.jpg){kind=logo}
.png)
