IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
Document identifier
IEC 62979 Ed. 1.0 en:2017
Title
Photovoltaic modules - Bypass diode - Thermal runaway test
IEC Category
TC 82: Solar photovoltaic energy systems
Publication date
2017-08-10
International Relationship
History of version
IEC 62979 Ed. 1.0 b:2017*IEC 62979 Ed. 1.0 en:2017 * IEC 62979 Ed. 1.0 b:2017 * IEC 62979 Ed. 1.0 en:2017
| Price |
82 vnd |
IEC 62979 Ed. 1.0 en:2017
.jpg){kind=logo}
---Logo.jpg){kind=logo}
.jpg){kind=logo}
-_-logo.png){kind=logo}
.jpg){kind=logo}
.png)
