ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
Document identifier
ISO 23812:2009
Title
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth calibration for silicon using multiple delta-layer reference materials
ISO Category
TC 201/SC 6: Secondary ion mass spectrometry
Publication date
2009-04-15
International Relationship
BS ISO 23812:2009 * BS ISO 23812:2009
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138 vnd |
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